ZeroDriver: an

Most small robotics and mechatronics projects usually require two boards - a microcontroller and a separate driver for the motors. Electronut Labs' latest solution, however, combines the two into a single package. Currently on Crowd Supply, ZeroDriver is an Arduino Zero-compatible dual-motor platform for the Maker community.

ZeroDriver is equipped with the same ARM Cortex-M0 MCU found at the heart of an Arduino Zero, Microchip's SAM D21, along with a built-in DRV8835 motor driver chip from TI.It ships with the Arduino Zero bootloader installed, so you can program it using the popular Arduino IDE. Just plug it in via USB and you're ready to go! Or, should you decide to delve into the gory details of the SAM D21, Electronut Labs provides you with a 10-pin JTAG header for configuring the board directly.

ZeroDriver is completely open-source.

All of its code, schematics, and design files are available on GitHub

·RELATED QUESTION

What is the working principle of an electric motor ?

An electric motor uses the attraction and repulsion of magnetic fields to produce motion. The simplest is the permanent magnet motor. A simplified version is shown below.Placing a coil of wire inside a permanent magnetic field and fixed so it can freely rotate.

Pass a current through the coil of wire and it will rotate to the perpendicular position. Now reverse the current flow and the coil will spin 180 degrees. The brushes and the commutator does the switching directions of the current through the coil at the appropriate moment to keep the coil rotating in one direction.

This is the basics of all electric motors.Fleming's left hand rule above describes the relationship between the main magnetic field. The current flowing in the coil and the direction of the movement or forceNow we can use electronics to do the switching instead of the commutator and brushes.

These motors are called Brushless DC motors.Larger motors require a stronger magnetic field and more electrical ,power to drive it faster and with more torque. Stronger magnetic fields are created by electromagnets.

AC motors use induction from the stationary windings to create the second magnetic field in the rotor. That induces currents in the rotor and these currents have their own magnetic field which interact ( repel and attract) with the main magnetic field to make the rotor rotate

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IGBT of Fuji Motor Electronic Equipment Technology
The IGBT technology of Fuji motor and electronic equipment technology has been commercialized since 1988 and has been supplied in the market so far. Figure 1-3 shows the development process and application technology of IGBT products from the first generation to the fifth generation. Epitaxial wafers are used in the first to third generation IGBT, and the characteristics are improved by optimizing life cycle control and refinement technology of IGBT. Then, the fourth and fifth generation products have achieved significant characteristic improvement through the transition from epitaxial wafer to FZ (floating zone) wafer. In this regard, the design policy of IGBT has changed greatly compared with the past.Firstly, the basic design idea of IGBT using epitaxial wafer (series products up to 600V of the third to fourth generation, called "breakdown type") is as follows. In order to realize the low-pass state voltage during IGBT conduction, a large number of carriers are injected from the collector side to fill the IGBT with high concentration carriers. In addition, the n-buffer layer specially set to maintain the high voltage forms a very thin n-layer, so as to realize the low-pass state voltage. In order to realize fast exchange, life cycle control technology aiming at the rapid disappearance of carriers filled in IGBT is also adopted (through these, low exchange loss (eoff) can also be realized). However, once the life cycle control technology is applied, even in the normal on state, due to the effect of this technology (the carrier transport efficiency decreases), there is a problem of increasing the on state voltage, which can be solved by further high carrier injection.In short, the basic design concept of IGBT using epitaxial wafer technology can be simply summarized as "high injection and low transmission efficiency". In contrast, IGBTs using FZ wafers (series after the fourth generation 1200V) adopt a reverse basic design to inhibit the injection of carriers from the collector side and improve the transmission efficiency by reducing the injection efficiency. In the above-mentioned design concept of IGBT using epitaxial wafer "high injection and low transmission efficiency", the carriers that are not easy to be injected are forcibly suppressed through the control of life cycle, which not only limits the improvement of characteristics, but also increases the standard deviation of on-state voltage characteristics through the control of life cycle, It is very disadvantageous to the large capacity required for parallel use with increasing requirements in recent years. The technology developed to overcome this problem is a new IGBT using FZ chip (NPT: non punch through (used from the fourth generation IGBT) / FS: field stop (used from the fifth generation IGBT) - IGBT). The IGBT does not adopt life cycle control. Its basic design idea is to control the impurity concentration of the collector (P layer), so as to inhibit the carrier injection efficiency. However, in order to realize the characteristics superior to the IGBT using epitaxial wafer, it is also required to realize more than one hundred for the 1200V high voltage resistant series IGBT μ M (the thickness of n-layer in NPT and fs-igbt using FZ wafer ≈ the thickness of chip (wafer). The thinner the thickness, the lower the on state voltage can be generated). In short, it is not too much to call the development of IGBT using FZ chip a challenge to chip thickness.Fuji electric and electronic equipment technology has solved these problems. Starting from the fourth generation 1200V series - IGBT, it has realized the commercialization of "s series" constructed by FZ chip NPT. In addition, 600V series technology with higher thickness requirements is further developed, and 600v-u2 series (fifth generation) is being commercialized. In addition, in 1200V series - the fifth generation "U Series", in order to improve the performance better than s series, NPT structure has been changed to FS structure.The so-called FS structure does not use the life cycle control technology. While following the basic design concept of "low injection and high transport efficiency" of carriers, an n buffer layer to maintain voltage is set on the FZ wafer, so as to realize the IGBT structure thinner than the NPT structure. Through this change, 1200v-u series realizes the low on state voltage characteristic better than s series, and completes its commercialization. In addition, this technology is also used in 1700V series high voltage withstand series, and is also starting to be commercialized.Figure 1-3 changes of Fuji motor electronic equipment IGBT application technologyIn addition, Fuji electric and electronic equipment technology is also refining the surface structure indispensable for the improvement of IGBT characteristics (IGBT is formed by multiple IGBT plates. Through refinement, the more plates, the more low on-state voltage can be realized). Up to the fourth generation products, the planar structure (the structure of planar IGBT) has been used to promote refinement, so as to improve the characteristics. However, starting from the fifth generation products - 1200 and 1700V series, the grooved IGBT technology slotted on the Si surface and constituting IGBT has broken the subtle technical barrier and achieved unprecedented characteristic improvement. Figure 1-4 shows the change of characteristic improvement of 1200V series.Figure 1-4 improvement of balance characteristics
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