Resenha Smartphone Motorola Milestone 2 A953

Embalada pelo sucesso do Milestone, a Motorola não foi boba e já emplacou, ainda em 2010, o Milestone 2, a evolução do aparelho considerado o melhor gadget de 2009 pela revista Time.O design design mudou e não mudou. Ele ainda segue o padrão bloco quadradão, os botões físicos ficam nos mesmos lugares, mas é visível a melhora, com cantos mais arredondados, acabamento em plástico prateado e traseira azulada, onde a frase "with Google" aparece duas vezes.Uma das melhores mudanças foi no teclado QWERTY físico, que ficou bem mais largo graças à retirada do pad de navegação (dourado, meio brega e desajeitado).

A digitação ficou mais fácil e as letras mais claras. Entretanto, para seguir o padrão dos seus outros aparelhos com o Blur (como o Flipout, o MB502, o Quench e outros) a Motorola trocou a ordem dos botões menu, início e voltar, o que pode confundir usuários do Milestone.A tela continua fantástica, embora a do Milestone seja um pouquinho mais brilhante.

Em comparação com o Samsung Galaxy S perde no brilho do Super Amoled, mas continua ganhando em definição, que pode ser comparada com tranquilidade à do iPhone 4. São 16 milhões de cores em uma tela de toque capacitava de 3.7 polegadas.A inserção do serviço Blur no Milestone o deixou mais poluído, porém mais prático.

o Blur permite que o usuário esteja mais integrado às redes sociais por meio de widgets na home.Quem já utiliza o serviço Blur da Motorola também sabe que pode, via web, solicitar o rastreamento do aparelho (caso o GPS esteja ligado) e a destruição dos dados pessoais à distncia (caso o 3G esteja ligado).Devido ao Blur a interface do Android, que era mais pura e mais simples no Milestone, ficou mais divertida e um pouquinho mais complexa.

Nada que atrapalhe muito, mas usuários mais xiitas podem reclamar.Porém, é possível notar algumas melhoras nesse novo sistema, já que algumas transições e funções ficaram mais bonitas no geral.Mas a grande novidade do Milestone 2 é ser o primeiro smartphone com o sistema operacional Android mais atualizado do Brasil, versão 2.

2 (Froyo).

Essa versão traz melhorias e melhor desempenho do aparelho, e isso é facilmente notado.Para começar, o Android 2.2 é muito mais preocupado com o gerenciamento do pacote de dados de internet móvel do que a versão anterior. São várias configurações no menu que ajudam a gastar menos e permitem ao usuário acompanhar melhor o que está gastando.

O mesmo vale para a bateria, que teve uma duração algumas horas maior do que o antigo modelo. Em nossos testes o Milestone 2 alcançou até 9 horas de uso com o 3G ligado, em média 3 horas a mais do que o antecessor.Os resultados do benchmark junto ao processador de 1GHz foram excelentes.

De acordo com o aplicativo Quadrant (disponível gratuitamente no Android Market) o Milestone 2 é o smartphone mais rápido de todos os devices com Android, passando até mesmo o Nexus One, o Droid X, o HTC Evo e o Samsung Galaxy S. Nada mau.É visível o aumento de velocidade e desempenho do modelo anterior para esse. Tudo é mais rápido, inclusive a navegação no browser próprio, que além de funcionar com múltiplas janelas, agora funciona com o Adobe Flash Player 10.

E para ajudar a digitar, a função Swype (já disponível no i1) está presente, bastando arrastar os dedos para formar palavras. É viciante depois que você começa a usar.Sua capacidade interna também é uma boa novidade.

Graças ao sistema 2.

2 é possível agora instalar aplicativos direto no cartão SD, mas isso nem seria necessário com uma memória interna de 8GB, mais um microSD pré-instalado de 8GB.Entretanto, é necessário primeiro baixar e instalar o aplicativo na memória interna e depois realocá-lo nas configurações do sistema.Além do thetering muito mais simples, outra novidade é a conexão com o padrão DLNA (Digital Living Network Alliance), que permite a transferência mais fácil de conteúdo entre aparelhos.

É possível, por exemplo, enviar fotos, vídeos e músicas para um Xbox 360, TVs da Samsung, etc.A cmera de 5 megapixels melhorou sensivelmente. As fotos estão mais nítidas, mais suaves e com cores mais acertadas.

O autofoco continua funcionando bem e a estabilização continua ruim.Ele também faz vídeos em HD simples (720p) e tem flash de LED duplo, mas infelizmente o zoom também continua apenas digital. Não é um smartphone para quem procura uma boa cmera.

As suas conexões funcionam todas a contento. O WiFi é sensível e o GPS funcionou com o serviço Blur até mesmo em interiores, com a ajuda do a-GPS. É possível utilizar o Milestone 2 com a base multimídia que vinha na caixa do primeiro modelo.

O player de música continua simples e a qualidade do som, tanto interna como externa, continua muito boa.Resumindo, recomendamos o Milestone 2. Ele é um ótimo substituto do Milestone e vale a troca. Ganha do Samsung Galaxy S em alguns poucos recursos, mas deve ser a melhor opção para quem quer um Android parrudo sem gastar demais.

·RELATED QUESTION

What is the working principle of an electric motor ?

An electric motor uses the attraction and repulsion of magnetic fields to produce motion. The simplest is the permanent magnet motor. A simplified version is shown below.Placing a coil of wire inside a permanent magnetic field and fixed so it can freely rotate.

Pass a current through the coil of wire and it will rotate to the perpendicular position. Now reverse the current flow and the coil will spin 180 degrees. The brushes and the commutator does the switching directions of the current through the coil at the appropriate moment to keep the coil rotating in one direction.

This is the basics of all electric motors.Fleming's left hand rule above describes the relationship between the main magnetic field. The current flowing in the coil and the direction of the movement or forceNow we can use electronics to do the switching instead of the commutator and brushes.

These motors are called Brushless DC motors.Larger motors require a stronger magnetic field and more electrical ,power to drive it faster and with more torque. Stronger magnetic fields are created by electromagnets.

AC motors use induction from the stationary windings to create the second magnetic field in the rotor. That induces currents in the rotor and these currents have their own magnetic field which interact ( repel and attract) with the main magnetic field to make the rotor rotate

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IGBT of Fuji Motor Electronic Equipment Technology
The IGBT technology of Fuji motor and electronic equipment technology has been commercialized since 1988 and has been supplied in the market so far. Figure 1-3 shows the development process and application technology of IGBT products from the first generation to the fifth generation. Epitaxial wafers are used in the first to third generation IGBT, and the characteristics are improved by optimizing life cycle control and refinement technology of IGBT. Then, the fourth and fifth generation products have achieved significant characteristic improvement through the transition from epitaxial wafer to FZ (floating zone) wafer. In this regard, the design policy of IGBT has changed greatly compared with the past.Firstly, the basic design idea of IGBT using epitaxial wafer (series products up to 600V of the third to fourth generation, called "breakdown type") is as follows. In order to realize the low-pass state voltage during IGBT conduction, a large number of carriers are injected from the collector side to fill the IGBT with high concentration carriers. In addition, the n-buffer layer specially set to maintain the high voltage forms a very thin n-layer, so as to realize the low-pass state voltage. In order to realize fast exchange, life cycle control technology aiming at the rapid disappearance of carriers filled in IGBT is also adopted (through these, low exchange loss (eoff) can also be realized). However, once the life cycle control technology is applied, even in the normal on state, due to the effect of this technology (the carrier transport efficiency decreases), there is a problem of increasing the on state voltage, which can be solved by further high carrier injection.In short, the basic design concept of IGBT using epitaxial wafer technology can be simply summarized as "high injection and low transmission efficiency". In contrast, IGBTs using FZ wafers (series after the fourth generation 1200V) adopt a reverse basic design to inhibit the injection of carriers from the collector side and improve the transmission efficiency by reducing the injection efficiency. In the above-mentioned design concept of IGBT using epitaxial wafer "high injection and low transmission efficiency", the carriers that are not easy to be injected are forcibly suppressed through the control of life cycle, which not only limits the improvement of characteristics, but also increases the standard deviation of on-state voltage characteristics through the control of life cycle, It is very disadvantageous to the large capacity required for parallel use with increasing requirements in recent years. The technology developed to overcome this problem is a new IGBT using FZ chip (NPT: non punch through (used from the fourth generation IGBT) / FS: field stop (used from the fifth generation IGBT) - IGBT). The IGBT does not adopt life cycle control. Its basic design idea is to control the impurity concentration of the collector (P layer), so as to inhibit the carrier injection efficiency. However, in order to realize the characteristics superior to the IGBT using epitaxial wafer, it is also required to realize more than one hundred for the 1200V high voltage resistant series IGBT μ M (the thickness of n-layer in NPT and fs-igbt using FZ wafer ≈ the thickness of chip (wafer). The thinner the thickness, the lower the on state voltage can be generated). In short, it is not too much to call the development of IGBT using FZ chip a challenge to chip thickness.Fuji electric and electronic equipment technology has solved these problems. Starting from the fourth generation 1200V series - IGBT, it has realized the commercialization of "s series" constructed by FZ chip NPT. In addition, 600V series technology with higher thickness requirements is further developed, and 600v-u2 series (fifth generation) is being commercialized. In addition, in 1200V series - the fifth generation "U Series", in order to improve the performance better than s series, NPT structure has been changed to FS structure.The so-called FS structure does not use the life cycle control technology. While following the basic design concept of "low injection and high transport efficiency" of carriers, an n buffer layer to maintain voltage is set on the FZ wafer, so as to realize the IGBT structure thinner than the NPT structure. Through this change, 1200v-u series realizes the low on state voltage characteristic better than s series, and completes its commercialization. In addition, this technology is also used in 1700V series high voltage withstand series, and is also starting to be commercialized.Figure 1-3 changes of Fuji motor electronic equipment IGBT application technologyIn addition, Fuji electric and electronic equipment technology is also refining the surface structure indispensable for the improvement of IGBT characteristics (IGBT is formed by multiple IGBT plates. Through refinement, the more plates, the more low on-state voltage can be realized). Up to the fourth generation products, the planar structure (the structure of planar IGBT) has been used to promote refinement, so as to improve the characteristics. However, starting from the fifth generation products - 1200 and 1700V series, the grooved IGBT technology slotted on the Si surface and constituting IGBT has broken the subtle technical barrier and achieved unprecedented characteristic improvement. Figure 1-4 shows the change of characteristic improvement of 1200V series.Figure 1-4 improvement of balance characteristics
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