Is Giving a Motor Boat the Same As Receiving a Motor Boat?

So you are planning to lie to him and hope he does not become infuriated. What if he does? What if that is enough to cause him to want to end things with you? So then, you tell him you are lying to show him how it feels. At that point he does not know what to believe. Are you lying about someone touching your breasts or are you lying about it not happening, because you do not want him to leave? Do not play games in your marriage. If you are upset, then talk about that. DO NOT lie about something that did not happen to you, and then expect him to ever believe anything you say again. You will do far more harm and it wo not cause him to feel the same as you feel about the "motor boating". I can just about guarantee you that he wo not feel giving is the same as receiving.

1. Are there any owners of a Harney motor home out there?

I have recently purchased a 1998 Safari Harney class C... would love to learn more as there is not any manuals with it. EdD

2. What is a simple motor? And what does it have to do with magnets?

It has everything to do with magnets. You know how two magnets can attract or repel each other? Well, harness those concepts into a cylinder with a free spinning armature in the center and you have a basic motor

3. 302 motor bad piston rings?

Ford 302 Piston Rings

4. when a motor frequency is increased using a VFD what is the behavior of the current of the motor ?

For a synchronous motor, it is the line frequency, NOT the voltage, that determines rotation rate. [and nobody uses VFDs for non-synchronous motors] At greater than line frequencies the current would be higher, leading to motor burnout. THis is why the torque available from the motor has to drop as you go above line frequency Hz where I am, different in other places]

5. water in jet ski motor?

water does not compress, you need to find out WHY WATER IS GETTING IN there is a flap that is supposed to keep water from entering intake, first pull the spark plugs out, crank over the jet ski on your new battery, and blow the water out, crank plugs out for 10 seconds then stop. then crank again for 10 seconds and stop observe if possible if any water comes out the plug holes,stand it up using plenty of help and let water drain out of the exhaust. then you have to get fresh fuel into the motor, take off the air cleaner housing, if its soaked water, dry the housing, dry the air filter and there should be a way to drain the carb of fuel an water. Even a small amount of water will hydro lock your engine, so when taking the plugs out and spinning the engine, make sure not water is left inside combustion chamber. make sure there is NO WATER IN THE OIL if it is a two stroke, take the plug out, spin the engine then put the plug back in, make sure no water is in the carb, start it up and get it running. the longer you let it sit with water in the engine the more problems with rust later, something is not working right because water should not get inside the motor. if none of this helps its time to get it too a shop, and have a good check of the systems

6. What Motor-Bike Would

I tried, but do not have the stamina to look through over 13,000 answers...... (hmm, prolific SOB, aint I?) Somewhere in there was the statement that Santa rides a Glacier White Superglide.... and I think there was something about Hondaline bags..... Edit: But that did not answer the question, now did it? I know I told you that I would get arrested if I got caught riding in the snow again. And, it is going to be a white Christmas this year.... Therefor, it would have to be a CanAm Spyder - because they could not tell me I was going to fall over. Should run ok, those folks do make snowmobiles. Which trailer?Studded tire, of course - done that before. Chain too. Only problem would be obtaining that HD custom color. It just has to be "Glacier White". (winter camo, dontcha know) Merry Christmas.

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IGBT of Fuji Motor Electronic Equipment Technology
The IGBT technology of Fuji motor and electronic equipment technology has been commercialized since 1988 and has been supplied in the market so far. Figure 1-3 shows the development process and application technology of IGBT products from the first generation to the fifth generation. Epitaxial wafers are used in the first to third generation IGBT, and the characteristics are improved by optimizing life cycle control and refinement technology of IGBT. Then, the fourth and fifth generation products have achieved significant characteristic improvement through the transition from epitaxial wafer to FZ (floating zone) wafer. In this regard, the design policy of IGBT has changed greatly compared with the past.Firstly, the basic design idea of IGBT using epitaxial wafer (series products up to 600V of the third to fourth generation, called "breakdown type") is as follows. In order to realize the low-pass state voltage during IGBT conduction, a large number of carriers are injected from the collector side to fill the IGBT with high concentration carriers. In addition, the n-buffer layer specially set to maintain the high voltage forms a very thin n-layer, so as to realize the low-pass state voltage. In order to realize fast exchange, life cycle control technology aiming at the rapid disappearance of carriers filled in IGBT is also adopted (through these, low exchange loss (eoff) can also be realized). However, once the life cycle control technology is applied, even in the normal on state, due to the effect of this technology (the carrier transport efficiency decreases), there is a problem of increasing the on state voltage, which can be solved by further high carrier injection.In short, the basic design concept of IGBT using epitaxial wafer technology can be simply summarized as "high injection and low transmission efficiency". In contrast, IGBTs using FZ wafers (series after the fourth generation 1200V) adopt a reverse basic design to inhibit the injection of carriers from the collector side and improve the transmission efficiency by reducing the injection efficiency. In the above-mentioned design concept of IGBT using epitaxial wafer "high injection and low transmission efficiency", the carriers that are not easy to be injected are forcibly suppressed through the control of life cycle, which not only limits the improvement of characteristics, but also increases the standard deviation of on-state voltage characteristics through the control of life cycle, It is very disadvantageous to the large capacity required for parallel use with increasing requirements in recent years. The technology developed to overcome this problem is a new IGBT using FZ chip (NPT: non punch through (used from the fourth generation IGBT) / FS: field stop (used from the fifth generation IGBT) - IGBT). The IGBT does not adopt life cycle control. Its basic design idea is to control the impurity concentration of the collector (P layer), so as to inhibit the carrier injection efficiency. However, in order to realize the characteristics superior to the IGBT using epitaxial wafer, it is also required to realize more than one hundred for the 1200V high voltage resistant series IGBT μ M (the thickness of n-layer in NPT and fs-igbt using FZ wafer ≈ the thickness of chip (wafer). The thinner the thickness, the lower the on state voltage can be generated). In short, it is not too much to call the development of IGBT using FZ chip a challenge to chip thickness.Fuji electric and electronic equipment technology has solved these problems. Starting from the fourth generation 1200V series - IGBT, it has realized the commercialization of "s series" constructed by FZ chip NPT. In addition, 600V series technology with higher thickness requirements is further developed, and 600v-u2 series (fifth generation) is being commercialized. In addition, in 1200V series - the fifth generation "U Series", in order to improve the performance better than s series, NPT structure has been changed to FS structure.The so-called FS structure does not use the life cycle control technology. While following the basic design concept of "low injection and high transport efficiency" of carriers, an n buffer layer to maintain voltage is set on the FZ wafer, so as to realize the IGBT structure thinner than the NPT structure. Through this change, 1200v-u series realizes the low on state voltage characteristic better than s series, and completes its commercialization. In addition, this technology is also used in 1700V series high voltage withstand series, and is also starting to be commercialized.Figure 1-3 changes of Fuji motor electronic equipment IGBT application technologyIn addition, Fuji electric and electronic equipment technology is also refining the surface structure indispensable for the improvement of IGBT characteristics (IGBT is formed by multiple IGBT plates. Through refinement, the more plates, the more low on-state voltage can be realized). Up to the fourth generation products, the planar structure (the structure of planar IGBT) has been used to promote refinement, so as to improve the characteristics. However, starting from the fifth generation products - 1200 and 1700V series, the grooved IGBT technology slotted on the Si surface and constituting IGBT has broken the subtle technical barrier and achieved unprecedented characteristic improvement. Figure 1-4 shows the change of characteristic improvement of 1200V series.Figure 1-4 improvement of balance characteristics
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