Identifying American (Mercury) Mariner Outboard

In progress.Managed to find Clymer repair manual (very broad, 2 to 220 HP, 1977 to 1989) through EBSCO database, it stresses using 1:25 fuel ratio on break-in, and 1:50 thereafter

We have Mariner 9.9E outboard motor. Having hard time figuring out year and Yamaha equivalent (early Mariners were Yamahas in disguise). There is very little information on those, and it is hard to find exact owner and repair manual.

Serial number on the motor starts with 682C, and, according to this reference it should equate to Yamaha 6E7 model (9.9D) from 1981 on. On Australian Yamaha support site I had found owners manual for 9.9D from 1984 (first edition). But I had read that Mariner 9.9E with SN 682C 551*** should be 1981 (hearsay-ish).

Is it safe to assume that international Yamaha 9.9D from mid-80s is equivalent to my particular Mariner? Could changes requested by Mercury be significant?

Given above, must I seek out specific Mercury or Yamaha service manual (no luck so far), or something like umbrella Seloc would be enough?

Is it normal that international 9.9D requires 1:100 oil to fuel ratio as per owners manual, and would it be the case in American version?

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IGBT of Fuji Motor Electronic Equipment Technology
The IGBT technology of Fuji motor and electronic equipment technology has been commercialized since 1988 and has been supplied in the market so far. Figure 1-3 shows the development process and application technology of IGBT products from the first generation to the fifth generation. Epitaxial wafers are used in the first to third generation IGBT, and the characteristics are improved by optimizing life cycle control and refinement technology of IGBT. Then, the fourth and fifth generation products have achieved significant characteristic improvement through the transition from epitaxial wafer to FZ (floating zone) wafer. In this regard, the design policy of IGBT has changed greatly compared with the past.Firstly, the basic design idea of IGBT using epitaxial wafer (series products up to 600V of the third to fourth generation, called "breakdown type") is as follows. In order to realize the low-pass state voltage during IGBT conduction, a large number of carriers are injected from the collector side to fill the IGBT with high concentration carriers. In addition, the n-buffer layer specially set to maintain the high voltage forms a very thin n-layer, so as to realize the low-pass state voltage. In order to realize fast exchange, life cycle control technology aiming at the rapid disappearance of carriers filled in IGBT is also adopted (through these, low exchange loss (eoff) can also be realized). However, once the life cycle control technology is applied, even in the normal on state, due to the effect of this technology (the carrier transport efficiency decreases), there is a problem of increasing the on state voltage, which can be solved by further high carrier injection.In short, the basic design concept of IGBT using epitaxial wafer technology can be simply summarized as "high injection and low transmission efficiency". In contrast, IGBTs using FZ wafers (series after the fourth generation 1200V) adopt a reverse basic design to inhibit the injection of carriers from the collector side and improve the transmission efficiency by reducing the injection efficiency. In the above-mentioned design concept of IGBT using epitaxial wafer "high injection and low transmission efficiency", the carriers that are not easy to be injected are forcibly suppressed through the control of life cycle, which not only limits the improvement of characteristics, but also increases the standard deviation of on-state voltage characteristics through the control of life cycle, It is very disadvantageous to the large capacity required for parallel use with increasing requirements in recent years. The technology developed to overcome this problem is a new IGBT using FZ chip (NPT: non punch through (used from the fourth generation IGBT) / FS: field stop (used from the fifth generation IGBT) - IGBT). The IGBT does not adopt life cycle control. Its basic design idea is to control the impurity concentration of the collector (P layer), so as to inhibit the carrier injection efficiency. However, in order to realize the characteristics superior to the IGBT using epitaxial wafer, it is also required to realize more than one hundred for the 1200V high voltage resistant series IGBT μ M (the thickness of n-layer in NPT and fs-igbt using FZ wafer ≈ the thickness of chip (wafer). The thinner the thickness, the lower the on state voltage can be generated). In short, it is not too much to call the development of IGBT using FZ chip a challenge to chip thickness.Fuji electric and electronic equipment technology has solved these problems. Starting from the fourth generation 1200V series - IGBT, it has realized the commercialization of "s series" constructed by FZ chip NPT. In addition, 600V series technology with higher thickness requirements is further developed, and 600v-u2 series (fifth generation) is being commercialized. In addition, in 1200V series - the fifth generation "U Series", in order to improve the performance better than s series, NPT structure has been changed to FS structure.The so-called FS structure does not use the life cycle control technology. While following the basic design concept of "low injection and high transport efficiency" of carriers, an n buffer layer to maintain voltage is set on the FZ wafer, so as to realize the IGBT structure thinner than the NPT structure. Through this change, 1200v-u series realizes the low on state voltage characteristic better than s series, and completes its commercialization. In addition, this technology is also used in 1700V series high voltage withstand series, and is also starting to be commercialized.Figure 1-3 changes of Fuji motor electronic equipment IGBT application technologyIn addition, Fuji electric and electronic equipment technology is also refining the surface structure indispensable for the improvement of IGBT characteristics (IGBT is formed by multiple IGBT plates. Through refinement, the more plates, the more low on-state voltage can be realized). Up to the fourth generation products, the planar structure (the structure of planar IGBT) has been used to promote refinement, so as to improve the characteristics. However, starting from the fifth generation products - 1200 and 1700V series, the grooved IGBT technology slotted on the Si surface and constituting IGBT has broken the subtle technical barrier and achieved unprecedented characteristic improvement. Figure 1-4 shows the change of characteristic improvement of 1200V series.Figure 1-4 improvement of balance characteristics
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