How to Block DC Signal Without Affecting the AC? Closed

What I want to know if Ii have AC voltage 2 kV and DC voltage 120 V on the same cable can i block the DC voltage to reach the busbar with a capacitor connected series between the cable and the busbar.Yes, but let's do some maths.$$ C frac 12 pi f Z frac 12 pi 50 cdot 1.67 1900mu F $$A quick look around for 4000 V capacitors (for safety) yields these brutes.

Figure 1. A 60uF/4000V capacitor. Dimensions: 105 x 170 x 170 mm. Weight: 5.

0 kg. Source: qro-parts.

We can calculate the quantity you need:$$ Q frac 190060 32 $$If you were to reduce the allowable voltage drop to 5% you would need double the capacitance or 64 of those big fellows.I have no idea about the quality of these capacitors and they seem small for the voltage and capacity.All of this is an interesting exercise but I suspect that your question has some errors in it and that this would be a very poor solution to the problem you are trying to solve. For a start, we've reduced the voltage to the motor and the voltage drop will change with load. We've also changed the power-factor so the generator might complain. We also haven't dealt with extracting the DC signal or how to avoid destroying the DC transmitter or receiver when there is a 2 kV AC signal with peaks of $ 2k sqrt2 approx 2.

8kV $ on the shared line.

I do not recommend this solution.

In any case, it seems most unlikely that your submersible pump is rated at 2 kV, 120 A 240 kVA and that it is using a single-phase motor

Closed. This question needs details or clarity. It is not currently accepting answers. Want to improve this question? Add details and clarify the problem by editing this post. Closed 3 years ago. Improve this question

ok first of all i want to apologize to U all for bad and useless info i have provided for U

simply any body know how submersible pump works it 's a 3-ph motor with a range of 60 HP to 500 HP and 2 KV rated voltage placed 4000 ft under the surface.

sometimes we need to know the temperature and the pressure down there so we put sensors these sensors need 120 V DC to transmit it's data so provide the DC voltage through the down hole cable (-) side will be the armor of the cable and the ( 120 V) side will be combined 3-phases together at the star point.

there is Echoke console which connect the 120 V DC with the 3-phases at star point.

at the down hole motor connected in Y so 120 V DC received at the star point also then to the sensors

so need to block the DC signal from getting back to the main busbar

that's all

here is schematic

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IGBT of Fuji Motor Electronic Equipment Technology
The IGBT technology of Fuji motor and electronic equipment technology has been commercialized since 1988 and has been supplied in the market so far. Figure 1-3 shows the development process and application technology of IGBT products from the first generation to the fifth generation. Epitaxial wafers are used in the first to third generation IGBT, and the characteristics are improved by optimizing life cycle control and refinement technology of IGBT. Then, the fourth and fifth generation products have achieved significant characteristic improvement through the transition from epitaxial wafer to FZ (floating zone) wafer. In this regard, the design policy of IGBT has changed greatly compared with the past.Firstly, the basic design idea of IGBT using epitaxial wafer (series products up to 600V of the third to fourth generation, called "breakdown type") is as follows. In order to realize the low-pass state voltage during IGBT conduction, a large number of carriers are injected from the collector side to fill the IGBT with high concentration carriers. In addition, the n-buffer layer specially set to maintain the high voltage forms a very thin n-layer, so as to realize the low-pass state voltage. In order to realize fast exchange, life cycle control technology aiming at the rapid disappearance of carriers filled in IGBT is also adopted (through these, low exchange loss (eoff) can also be realized). However, once the life cycle control technology is applied, even in the normal on state, due to the effect of this technology (the carrier transport efficiency decreases), there is a problem of increasing the on state voltage, which can be solved by further high carrier injection.In short, the basic design concept of IGBT using epitaxial wafer technology can be simply summarized as "high injection and low transmission efficiency". In contrast, IGBTs using FZ wafers (series after the fourth generation 1200V) adopt a reverse basic design to inhibit the injection of carriers from the collector side and improve the transmission efficiency by reducing the injection efficiency. In the above-mentioned design concept of IGBT using epitaxial wafer "high injection and low transmission efficiency", the carriers that are not easy to be injected are forcibly suppressed through the control of life cycle, which not only limits the improvement of characteristics, but also increases the standard deviation of on-state voltage characteristics through the control of life cycle, It is very disadvantageous to the large capacity required for parallel use with increasing requirements in recent years. The technology developed to overcome this problem is a new IGBT using FZ chip (NPT: non punch through (used from the fourth generation IGBT) / FS: field stop (used from the fifth generation IGBT) - IGBT). The IGBT does not adopt life cycle control. Its basic design idea is to control the impurity concentration of the collector (P layer), so as to inhibit the carrier injection efficiency. However, in order to realize the characteristics superior to the IGBT using epitaxial wafer, it is also required to realize more than one hundred for the 1200V high voltage resistant series IGBT μ M (the thickness of n-layer in NPT and fs-igbt using FZ wafer ≈ the thickness of chip (wafer). The thinner the thickness, the lower the on state voltage can be generated). In short, it is not too much to call the development of IGBT using FZ chip a challenge to chip thickness.Fuji electric and electronic equipment technology has solved these problems. Starting from the fourth generation 1200V series - IGBT, it has realized the commercialization of "s series" constructed by FZ chip NPT. In addition, 600V series technology with higher thickness requirements is further developed, and 600v-u2 series (fifth generation) is being commercialized. In addition, in 1200V series - the fifth generation "U Series", in order to improve the performance better than s series, NPT structure has been changed to FS structure.The so-called FS structure does not use the life cycle control technology. While following the basic design concept of "low injection and high transport efficiency" of carriers, an n buffer layer to maintain voltage is set on the FZ wafer, so as to realize the IGBT structure thinner than the NPT structure. Through this change, 1200v-u series realizes the low on state voltage characteristic better than s series, and completes its commercialization. In addition, this technology is also used in 1700V series high voltage withstand series, and is also starting to be commercialized.Figure 1-3 changes of Fuji motor electronic equipment IGBT application technologyIn addition, Fuji electric and electronic equipment technology is also refining the surface structure indispensable for the improvement of IGBT characteristics (IGBT is formed by multiple IGBT plates. Through refinement, the more plates, the more low on-state voltage can be realized). Up to the fourth generation products, the planar structure (the structure of planar IGBT) has been used to promote refinement, so as to improve the characteristics. However, starting from the fifth generation products - 1200 and 1700V series, the grooved IGBT technology slotted on the Si surface and constituting IGBT has broken the subtle technical barrier and achieved unprecedented characteristic improvement. Figure 1-4 shows the change of characteristic improvement of 1200V series.Figure 1-4 improvement of balance characteristics
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